151-18 GP BJT

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  • 15 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 180V 6A

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Base Voltage 205 V
Maximum Collector Emitter Saturation Voltage 1.3@0.25A@1.5A V
Maximum Collector Emitter Voltage 180 V
Maximum DC Collector Current 6 A
Maximum Emitter Base Voltage 25 V
Maximum Operating Temperature 150 ᄀC
Maximum Power Dissipation 175000 mW
Maximum Transition Frequency 250(Min) MHz
Type NPN