1N6070 TVS
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- 32 GENERAL SEMI
- 1134 NEW JERSEY SEMICONDUCTOR
- 4 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Direction Type | Bi-Directional | |
| Maximum Clamping Voltage | 292 | V |
| Maximum Operating Temperature | 175 | °C |
| Maximum Peak Pulse Current | 5.1 | A |
| Maximum Reverse Leakage Current | 5 | uA |
| Maximum Reverse Stand-off Voltage | 155 | V |
| Minimum Breakdown Voltage | 171 | V |
| Minimum Operating Temperature | -55 | °C |
| Number of Elements per Chip | 1 | |
| Operating Junction Temperature | -55 to 175 | °C |
| Peak Pulse Power Dissipation | 1500 | W |
| Test Current | 1 | mA |