1N6103US TVS
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- 630 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Direction Type | Bi-Directional | |
| Maximum Clamping Voltage | 11.8 | V |
| Maximum Peak Pulse Current | 42.4 | A |
| Maximum Reverse Leakage Current | 50 | uA |
| Maximum Reverse Stand-off Voltage | 5.7 | V |
| Minimum Breakdown Voltage | 6.75 | V |
| Number of Elements per Chip | 1 | |
| Peak Pulse Power Dissipation | 500 | W |
| Test Current | 175 | mA |