1N6110A TVS
Datasheet: View
Stock
- 978 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Direction Type | Bi-Directional | |
| Maximum Clamping Voltage | 21 | V |
| Maximum Operating Temperature | 175 | °C |
| Maximum Peak Pulse Current | 23.8 | A |
| Maximum Reverse Leakage Current | 20 | uA |
| Maximum Reverse Stand-off Voltage | 11.4 | V |
| Minimum Breakdown Voltage | 14.25 | V |
| Minimum Operating Temperature | -65 | °C |
| Number of Elements per Chip | 1 | |
| Operating Junction Temperature | -65 to 175 | °C |
| Peak Pulse Power Dissipation | 500 | W |
| Test Current | 75 | mA |