1N6112 TVS
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- 1865 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Direction Type | Bi-Directional | |
| Maximum Clamping Voltage | 26.3 | V |
| Maximum Operating Temperature | 175 | °C |
| Maximum Peak Pulse Current | 19 | A |
| Maximum Reverse Leakage Current | 1 | uA |
| Maximum Reverse Stand-off Voltage | 13.7 | V |
| Minimum Breakdown Voltage | 16.2 | V |
| Minimum Operating Temperature | -65 | °C |
| Number of Elements per Chip | 1 | |
| Peak Pulse Power Dissipation | 500 | W |
| Test Current | 65 | mA |