1N6168 TVS
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- 950 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Direction Type | Bi-Directional | |
| Maximum Clamping Voltage | 172.9 | V |
| Maximum Peak Pulse Current | 8.7 | A |
| Maximum Reverse Leakage Current | 5 | uA |
| Maximum Reverse Stand-off Voltage | 91.2 | V |
| Minimum Breakdown Voltage | 108 | V |
| Number of Elements per Chip | 1 | |
| Peak Pulse Power Dissipation | 1500 | W |
| Test Current | 10 | mA |