1N6269A TVS
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Stock
- 72 GENERAL INSTRUMENT
- 38 GENERAL SEMICONDUCTOR
- 13 MOTOROLA
- 2165 NEW JERSEY SEMICONDUCTOR
- 5 RF POWER
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Direction Type | Uni-Directional | |
| Maximum Clamping Voltage | 12.1 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Peak Pulse Current | 124 | A |
| Maximum Reverse Leakage Current | 200 | uA |
| Maximum Reverse Stand-off Voltage | 7.02 | V |
| Minimum Breakdown Voltage | 7.79 | V |
| Minimum Operating Temperature | -65 | °C |
| Number of Elements per Chip | 1 | |
| Peak Pulse Power Dissipation | 1500 | W |
| Test Current | 10 | mA |