1N6297 TVS
Datasheet: View
Stock
- 57 GENERAL SEMICONDUCTOR
- 90 MOTOROLA
- 79 NEW JERSEY SEMICONDUCTOR
- 99 RF POWER
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Direction Type | Uni-Directional | |
| Maximum Clamping Voltage | 173 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Peak Pulse Current | 8.7 | A |
| Maximum Reverse Leakage Current | 5 | uA |
| Maximum Reverse Stand-off Voltage | 97.2 | V |
| Minimum Breakdown Voltage | 108 | V |
| Minimum Operating Temperature | -65 | °C |
| Number of Elements per Chip | 1 | |
| Peak Pulse Power Dissipation | 1500 | W |
| Test Current | 1 | mA |