1N6301 TVS
Datasheet: View
Stock
- 3 GENERAL SEMICONDUCTOR
- 1 MOTOROLA
- 54 NEW JERSEY SEMICONDUCTOR
- 9 RF POWER
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Direction Type | Uni-Directional | |
| Maximum Clamping Voltage | 244 | V |
| Maximum Operating Temperature | 175 | °C |
| Maximum Peak Pulse Current | 6.1 | A |
| Maximum Reverse Leakage Current | 1 | uA |
| Maximum Reverse Stand-off Voltage | 138 | V |
| Minimum Breakdown Voltage | 153 | V |
| Minimum Operating Temperature | -55 | °C |
| Number of Elements per Chip | 1 | |
| Operating Junction Temperature | -55 to 175 | °C |
| Peak Pulse Power Dissipation | 1500(Min) | W |
| Test Current | 1 | mA |