1N6365 TVS
Datasheet: View
Stock
- 6 GENERAL SEMICONDUCTOR
- 5 MICROSEMI CONDUCTOR
- 1240 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Direction Type | Bi-Directional | |
| Maximum Clamping Voltage | 11.6 | V |
| Maximum Operating Temperature | 175 | °C |
| Maximum Peak Pulse Current | 100 | A |
| Maximum Reverse Leakage Current | 25 | uA |
| Maximum Reverse Stand-off Voltage | 8 | V |
| Minimum Breakdown Voltage | 9.4 | V |
| Minimum Operating Temperature | -65 | °C |
| Number of Elements per Chip | 1 | |
| Peak Pulse Power Dissipation | 1500 | W |
| Test Current | 1 | mA |