1N645 Rectifier

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  • 36 BHC
  • 166 ELECTRONIC TRANSISTOR
  • 11 ERIE
  • 8697 GENERAL INSTRUMENT
  • 336 INTERMETALL
  • 291 MICROSEMI CONDUCTOR
  • 31685 NEW JERSEY SEMICONDUCTOR
  • 399 SIGNETICS
  • 1 SOLITRON
  • 25 SPACEPOWER
  • 455 TEXAS INSTRUMENT
  • 14 TOMSON
  • 16 TRANSITRON
  • 1 UNITRODE
  • 5 WORLD WIDE

SILICON GENERAL PURPOSE DIODE

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Features Values Unit
Configuration Single
Maximum Continuous Forward Current 0.4 A
Maximum Operating Temperature 175 °C
Maximum Power Dissipation 600 mW
Minimum Operating Temperature -65 °C
Operating Junction Temperature -65 to 175 °C
Peak Forward Voltage 1 V
Peak Non-Repetitive Surge Current 3 A
Peak Reverse Current 0.2 uA
Peak Reverse Repetitive Voltage 225 V