1N6470 TVS

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  • 134 NEW JERSEY SEMICONDUCTOR
Features Values Unit
Maximum Operating Temperature 175 °C
Maximum Reverse Leakage Current 1000 uA
Minimum Operating Temperature -55 °C
Test Current 50 mA
Minimum Breakdown Voltage 6.5 V
Number of Elements per Chip 1
Peak Pulse Power Dissipation 1500 W
Configuration Single
Direction Type Uni-Directional
Maximum Clamping Voltage 11 V
Maximum Peak Pulse Current 775 A
Maximum Reverse Stand-off Voltage 6 V