1N6471 TVS

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  • 11 NEW JERSEY SEMICONDUCTOR
Features Values Unit
Maximum Operating Temperature 175 °C
Maximum Reverse Leakage Current 20 uA
Minimum Operating Temperature -55 °C
Test Current 10 mA
Maximum Reverse Stand-off Voltage 12 V
Minimum Breakdown Voltage 13.6 V
Number of Elements per Chip 1
Peak Pulse Power Dissipation 1500 W
Configuration Single
Direction Type Uni-Directional
Maximum Clamping Voltage 22.6 V
Maximum Peak Pulse Current 374 A