1N649 Rectifier

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  • 1402 GENERAL INSTRUMENT
  • 155 INTERMETALL
  • 74956 NEW JERSEY SEMICONDUCTOR
  • 4 SIGNETICS
  • 95 SOLID STATE TRANSISTOR
  • 5 TEXAS INSTRUMENT
  • 8 WORLD WIDE

SILICON GENERAL PURPOSE DIODE

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Features Values Unit
Configuration Single
Maximum Continuous Forward Current 0.4 A
Maximum Operating Temperature 175 °C
Maximum Power Dissipation 600 mW
Minimum Operating Temperature -65 °C
Operating Junction Temperature -65 to 175 °C
Peak Forward Voltage 1 V
Peak Non-Repetitive Surge Current 3 A
Peak Reverse Current 0.2 uA
Peak Reverse Repetitive Voltage 600 V