23A017 GP BJT
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- 0 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Dual Common Emitter | |
| Maximum Collector Emitter Voltage | 50 | V |
| Maximum DC Collector Current | 0.8 | A |
| Maximum Emitter Base Voltage | 3.5 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 6000 | mW |
| Maximum Transition Frequency | 3700(Typ) | MHz |
| Type | NPN |