2N1016 GP BJT

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  • 135 NEW JERSEY SEMICONDUCTOR
  • 7 SILICON TRANSISTOR CORP
  • 3 SOLITRON
  • 5 WESTINGHOUSE

Trans GP BJT NPN 30V 7.5A

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Voltage 30 V
Maximum DC Collector Current 7.5 A
Maximum Emitter Base Voltage 25 V
Maximum Operating Temperature 150 ᄀC
Maximum Power Dissipation 150000 mW
Maximum Transition Frequency 250(Min) MHz
Type NPN