2N1016B GP BJT

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  • 1 BENDIX
  • 1 ELECTRONIC TRANSISTOR
  • 6 HARRIS
  • 126 NEW JERSEY SEMICONDUCTOR
  • 30 SOLID POWER CORP
  • 17 SOLID STATE TRANSISTOR
  • 1 SOLITRON
  • 5 WESTINGHOUSE

Trans GP BJT NPN 100V 7.5A

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Voltage 100 V
Maximum DC Collector Current 7.5 A
Maximum Emitter Base Voltage 25 V
Maximum Operating Temperature 150 ᄀC
Maximum Power Dissipation 150000 mW
Maximum Transition Frequency 250(Min) MHz
Type NPN