2N1016C GP BJT
Datasheet: View
Stock
- 1 ELECTRONIC TRANSISTOR
- 235 NEW JERSEY SEMICONDUCTOR
- 4 SILICONIX
- 18 SILICON TRANSISTOR CORP
- 14 SOLID POWER CORP
- 9 WESTINGHOUSE
Trans GP BJT NPN 150V 7.5A
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Emitter Voltage | 150 | V |
| Maximum DC Collector Current | 7.5 | A |
| Maximum Emitter Base Voltage | 25 | V |
| Maximum Operating Temperature | 150 | ﾡC |
| Maximum Power Dissipation | 150000 | mW |
| Maximum Transition Frequency | 250(Min) | MHz |
| Type | NPN |