2N1016D GP BJT
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- 3 AMR TECHNOLOGY
- 115 NEW JERSEY SEMICONDUCTOR
- 2 SOLID POWER CORP
- 2 SOLITRON
- 3 WESTINGHOUSE
Trans GP BJT NPN 200V 7.5A
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Emitter Voltage | 200 | V |
| Maximum DC Collector Current | 7.5 | A |
| Maximum Emitter Base Voltage | 25 | V |
| Maximum Operating Temperature | 150 | ﾡC |
| Maximum Power Dissipation | 150000 | mW |
| Maximum Transition Frequency | 250(Min) | MHz |
| Type | NPN |