2N1016E GP BJT

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  • 5 API
  • 39 NEW JERSEY SEMICONDUCTOR
  • 2 SILICON TRANSISTOR CORP
  • 6 SOLID POWER CORP

Trans GP BJT NPN 250V 7.5A

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Voltage 250 V
Maximum DC Collector Current 7.5 A
Maximum Emitter Base Voltage 25 V
Maximum Operating Temperature 150 ᄀC
Maximum Power Dissipation 150000 mW
Maximum Transition Frequency 250(Min) MHz
Type NPN