2N1209 GP BJT
Datasheet: View
Stock
- 1 GENERAL SEMICONDUCTOR
- 145 NEW JERSEY SEMICONDUCTOR
- 2 SOLID STATE TRANSISTOR
- 36 TRANSITRON
- 10 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Emitter Saturation Voltage | 5@0.25mA@2mA | V |
| Maximum Collector Emitter Voltage | 45 | V |
| Maximum DC Collector Current | 5 | A |
| Maximum Power Dissipation | 85000 | mW |
| Type | NPN |