2N1211 GP BJT

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  • 570 NEW JERSEY SEMICONDUCTOR
  • 4 SILICON TRANSISTOR CORP

Trans GP BJT NPN 60V 5A 3-Pin TO-61

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 5@0.2mA@1mA V
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 5 A
Maximum Power Dissipation 85000 mW
Type NPN