2N1211 GP BJT
Datasheet: View
Stock
- 570 NEW JERSEY SEMICONDUCTOR
- 4 SILICON TRANSISTOR CORP
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Emitter Saturation Voltage | 5@0.2mA@1mA | V |
| Maximum Collector Emitter Voltage | 60 | V |
| Maximum DC Collector Current | 5 | A |
| Maximum Power Dissipation | 85000 | mW |
| Type | NPN |