2N1302 GP BJT
Datasheet: View
Stock
- 96 ELECTRONIC TRANSISTOR
- 1 GENERAL ELECTRIC
- 10 GENERAL INSTRUMENT
- 3689 NEW JERSEY SEMICONDUCTOR
- 4 RAYTHEON
- 1095 RCA
- 1 RF POWER
- 5 SEMICON
- 4 SOLID STATE TRANSISTOR
- 66 STMICRO
- 120 TEXAS INSTRUMENT
- 1 WALBERN
- 26 WALBERN
- 5 WESTINGHOUSE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Small Signal | |
| Configuration | Single | |
| Material | Ge | |
| Maximum Collector Base Voltage | 25 | V |
| Maximum DC Collector Current | 0.3 | A |
| Maximum Emitter Base Voltage | 25 | V |
| Maximum Operating Temperature | 85 | °C |
| Maximum Power Dissipation | 150 | mW |
| Type | NPN |