2N1305A GP BJT

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  • 10 NEW JERSEY SEMICONDUCTOR
  • 47 TEXAS INSTRUMENT

Trans GP BJT PNP 0.3A

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Ge
Maximum Collector Base Voltage 30 V
Maximum Collector Emitter Saturation Voltage 0.2@0.25mA@10mA V
Maximum DC Collector Current 0.3 A
Maximum Emitter Base Voltage 25 V
Maximum Operating Temperature 85 °C
Maximum Power Dissipation 150 mW
Type PNP