2N1306 GP BJT
Datasheet: View
Stock
- 11 ELECTRONIC TRANSISTOR
- 4 GENERAL ELECTRIC
- 107 GENERAL INSTRUMENT
- 2075 NEW JERSEY SEMICONDUCTOR
- 26 RCA
- 3 SOLID SATE
- 246 SOLID STATE TRANSISTOR
- 1 STMICRO
- 1 SYLVANIA
- 42 TEXAS INSTRUMENT
- 1 UNITED PAGE
- 42 UNITED TECHNOLIGIES
- 90 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Small Signal | |
| Configuration | Single | |
| Material | Ge | |
| Maximum Collector Base Voltage | 25 | V |
| Maximum DC Collector Current | 0.3 | A |
| Maximum Emitter Base Voltage | 25 | V |
| Maximum Operating Temperature | 85 | °C |
| Maximum Power Dissipation | 150 | mW |
| Type | NPN |