2N1420 GP BJT
Datasheet: View
Stock
- 20 GENERAL INSTRUMENT
- 1125 NATIONAL SEMICONDUCTOR
- 211730 NEW JERSEY SEMICONDUCTOR
- 266 RAYTHEON
- 55 RCA
- 72 SIEMENS
- 6870 TELEDYNE
- 11612 TEXAS INSTRUMENT
- 25 TRANSITRON
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 60 | V |
| Maximum Collector Emitter Saturation Voltage | 0.75@10mA@200mA | V |
| Maximum Collector Emitter Voltage | 40 | V |
| Maximum DC Collector Current | 1.5 | A |
| Maximum Emitter Base Voltage | 12 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 1000 | mW |
| Type | NPN |