2N1480 GP BJT
Datasheet: View
Stock
- 9 HARRIS
- 4685 NEW JERSEY SEMICONDUCTOR
- 32 RAYTHEON
- 4 SILICON TRANSISTOR CORP
- 11 TRANSITRON
- 8 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Small Signal | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 100 | V |
| Maximum Collector Emitter Saturation Voltage | 1.4@20mA@200mA | V |
| Maximum Collector Emitter Voltage | 55 | V |
| Maximum DC Collector Current | 1.5 | A |
| Maximum Emitter Base Voltage | 6 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 5000 | mW |
| Maximum Transition Frequency | 1.5(Typ) | MHz |
| Type | NPN |