2N1482/S GP BJT

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  • 4 SILICON TRANSISTOR CORP

Trans GP BJT NPN 55V 1.5A 3-Pin TO-39 Box

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 100 V
Maximum Collector Emitter Saturation Voltage 1.4@10mA@200mA V
Maximum Collector Emitter Voltage 55 V
Maximum DC Collector Current 1.5 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 5000 mW
Maximum Transition Frequency 1.5(Typ) MHz
Type NPN