2N1484 GP BJT

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Stock

  • 4890 NEW JERSEY SEMICONDUCTOR
  • 2 RCA
  • 5 SILICON TRANSISTOR CORP
  • 196 SOLID POWER CORP
  • 1 SOLITRON

Trans GP BJT NPN 55V 3A 3-Pin TO-8

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 100 V
Maximum Collector Emitter Saturation Voltage 1.2@75mA@750mA V
Maximum Collector Emitter Voltage 55 V
Maximum DC Collector Current 3 A
Maximum Emitter Base Voltage 12 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 1750 mW
Type NPN