2N1485 GP BJT
Datasheet: View
Stock
- 1 API
- 151 NEW JERSEY SEMICONDUCTOR
- 1 ON SEMI
- 7 RCA
- 25 SIGNETICS
- 1 SILICON TRANSISTOR CORP
- 13 SOLID POWER CORP
- 11 SOLID STATE TRANSISTOR
- 32 SOLITRON
- 4 UNITED TECHNOLIGIES
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 60 | V |
| Maximum Collector Emitter Saturation Voltage | 0.75@40mA@750mA | V |
| Maximum Collector Emitter Voltage | 40 | V |
| Maximum DC Collector Current | 3 | A |
| Maximum Emitter Base Voltage | 12 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 1750 | mW |
| Type | NPN |