2N1487 GP BJT
Datasheet: View
Stock
- 340 BENDIX
- 1 ELECTRONIC TRANSISTOR
- 13 GENERAL ELECTRIC
- 91 NEW JERSEY SEMICONDUCTOR
- 28 RCA
- 10 RFGAIN
- 10 RF POWER
- 18 SILICON TRANSISTOR CORP
- 120 WATKINS JOHNSON
- 118 WESTINGHOUSE
Trans GP BJT NPN 40V 6A 3-Pin(2+Tab) TO-3
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 60 | V |
| Maximum Collector Emitter Saturation Voltage | 3@300mA@1.5A | V |
| Maximum Collector Emitter Voltage | 40 | V |
| Maximum DC Collector Current | 6 | A |
| Maximum Emitter Base Voltage | 10 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 75000 | mW |
| Type | NPN |