2N1488 GP BJT
Datasheet: View
Stock
- 5 ADVANCED SEMI
- 3 BENDIX
- 1 ELECTRONIC TRANSISTOR
- 42 GENERAL ELECTRIC
- 1004 NEW JERSEY SEMICONDUCTOR
- 57 RCA
- 91 RF POWER
- 2 UNITED PAGE
Trans GP BJT NPN 55V 6A 3-Pin(2+Tab) TO-3
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 100 | V |
| Maximum Collector Emitter Saturation Voltage | 3@300mA@1.5A | V |
| Maximum Collector Emitter Voltage | 55 | V |
| Maximum DC Collector Current | 6 | A |
| Maximum Emitter Base Voltage | 10 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 75000 | mW |
| Type | NPN |