2N1489 GP BJT

default part image

Datasheet: View

Stock

  • 17 BENDIX
  • 8 CRC
  • 6 ELECTRONIC TRANSISTOR
  • 122 NEW JERSEY SEMICONDUCTOR
  • 20 PIRGO
  • 12 POWER PHYSICS CORP
  • 37 RCA
  • 3 SILICON TRANSISTOR CORP
  • 1 SOLID POWER CORP
  • 6 SOLITRON
  • 11 TECCOR
  • 45 TEXAS INSTRUMENT
  • 3 UNITED PAGE

Trans GP BJT NPN 40V 6A 3-Pin(2+Tab) TO-3

Request For Quote
Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 60 V
Maximum Collector Emitter Saturation Voltage 1@100mA@1.5A V
Maximum Collector Emitter Voltage 40 V
Maximum DC Collector Current 6 A
Maximum Emitter Base Voltage 10 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 75000 mW
Type NPN