2N1490 GP BJT

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Stock

  • 12 BENDIX
  • 7 ELECTRONIC TRANSISTOR
  • 1 KRC
  • 72 NEW JERSEY SEMICONDUCTOR
  • 11 RCA
  • 39 RF POWER
  • 19 SILICON TRANSISTOR CORP
  • 7 SNSITRON
  • 1 SOLID STATE TRANSISTOR
  • 1 SOLITRON
  • 1 UNITED PAGE
  • 37 WESTINGHOUSE

Trans GP BJT NPN 55V 6A 3-Pin(2+Tab) TO-3

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 100 V
Maximum Collector Emitter Saturation Voltage 1@100mA@1.5A V
Maximum Collector Emitter Voltage 55 V
Maximum DC Collector Current 6 A
Maximum Emitter Base Voltage 10 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 75000 mW
Type NPN