2N1566 GP BJT
Datasheet: View
Stock
- 726 NATIONAL SEMICONDUCTOR
- 614 NEW JERSEY SEMICONDUCTOR
- 15 RF POWER
- 38 SOLID STATE TRANSISTOR
- 561 TEXAS INSTRUMENT
- 9 TRANSITRON
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Emitter Saturation Voltage | 1.5@0.05mA@0.1mA | V |
| Maximum Collector Emitter Voltage | 40 | V |
| Maximum DC Collector Current | 0.5 | A |
| Maximum Power Dissipation | 3000 | mW |
| Type | NPN |