2N1566 GP BJT

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  • 726 NATIONAL SEMICONDUCTOR
  • 614 NEW JERSEY SEMICONDUCTOR
  • 15 RF POWER
  • 38 SOLID STATE TRANSISTOR
  • 561 TEXAS INSTRUMENT
  • 9 TRANSITRON

Trans GP BJT NPN 40V 0.5A 3-Pin TO-5

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 1.5@0.05mA@0.1mA V
Maximum Collector Emitter Voltage 40 V
Maximum DC Collector Current 0.5 A
Maximum Power Dissipation 3000 mW
Type NPN