2N1613A GP BJT

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  • 19 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 70V 0.5A 3-Pin TO-5

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 1@0.2mA@2mA V
Maximum Collector Emitter Voltage 70 V
Maximum DC Collector Current 0.5 A
Maximum Power Dissipation 3000 mW
Type NPN