2N1652 GP BJT
Datasheet: View
Stock
- 2 ELECTRONIC TRANSISTOR
- 11 GERMANIUM POWER DEVICES
- 1 MOTOROLA
- 151 NEW JERSEY SEMICONDUCTOR
- 5 RF POWER
- 1 SOLITRON
- 2 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Small Signal | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 75 | V |
| Maximum Collector Emitter Saturation Voltage | 1.5@15mA@150mA | V |
| Maximum Collector Emitter Voltage | 50 | V |
| Maximum DC Collector Current | 0.5 | A |
| Maximum Emitter Base Voltage | 7 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 800 | mW |
| Maximum Transition Frequency | 60(Min) | MHz |
| Type | NPN |