2N1722 GP BJT
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- 2397 NEW JERSEY SEMICONDUCTOR
- 642 SILICON TRANSISTOR CORP
- 3 STMICRO
- 24 TEXAS INSTRUMENT
- 7 TRANSITRON
Trans GP BJT NPN 80V 5A 3-Pin TO-53
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 175 | V |
| Maximum Collector Emitter Saturation Voltage | 0.6@200mA@2A | V |
| Maximum Collector Emitter Voltage | 80 | V |
| Maximum DC Collector Current | 5 | A |
| Maximum Emitter Base Voltage | 10 | V |
| Maximum Operating Temperature | 175 | °C |
| Maximum Power Dissipation | 3000 | mW |
| Type | NPN |