2N1768 GP BJT
Datasheet: View
Stock
- 363 NEW JERSEY SEMICONDUCTOR
- 1 SILICON TRANSISTOR CORP
- 4 SOLID POWER CORP
- 36 XXX
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 175 | V |
| Maximum Collector Emitter Saturation Voltage | 0.6@0.2A@2A | V |
| Maximum Collector Emitter Voltage | 80 | V |
| Maximum DC Collector Current | 5 | A |
| Maximum Emitter Base Voltage | 10 | V |
| Maximum Operating Temperature | 175 | °C |
| Maximum Power Dissipation | 3000 | mW |
| Type | NPN |