2N1769 GP BJT

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Stock

  • 172 NEW JERSEY SEMICONDUCTOR
  • 1 SILICON TRANSISTOR CORP
  • 3 SOLID POWER CORP
  • 2 WORLD WIDE

Trans GP BJT NPN 80V 5A 3-Pin TO-61

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 175 V
Maximum Collector Emitter Saturation Voltage 0.6@0.2A@2A V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 5 A
Maximum Emitter Base Voltage 10 V
Maximum Operating Temperature 175 °C
Maximum Power Dissipation 3000 mW
Type NPN