2N1890 GP BJT

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  • 16922 NEW JERSEY SEMICONDUCTOR
  • 1 RAYTHEON
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  • 15 SOLID SATE
  • 384 SOLID STATE TRANSISTOR
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  • 69 TELEDYNE CRYSTALONICS
  • 100 TEXAS INSTRUMENT

Trans GP BJT NPN 60V 0.5A 3-Pin TO-5

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 100 V
Maximum Collector Emitter Saturation Voltage 5@15mA@150mA|1.2@5mA@50mA V
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 0.5 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 800 mW
Type NPN