2N1893 GP BJT

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Stock

  • 21 ADVANCED SEMI
  • 33 FAIRCHILD
  • 14 INTERMETALL
  • 70 MOTOROLA
  • 16 NATIONAL SEMICONDUCTOR
  • 48802 NEW JERSEY SEMICONDUCTOR
  • 1396 RAYTHEON
  • 4 RCA
  • 150 SGS
  • 33 SIEMENS
  • 1 SOLID STATE TRANSISTOR
  • 1 ST MICRO
  • 1 TELEDYNE
  • 2 TELEDYNE
  • 177 TELEDYNE CRYSTALONICS
  • 23 TELEDYNE SEMI
  • 273 TEXAS INSTRUMENT
  • 1 TOMMORROW
  • 39 TOMSON
  • 839 TRANSITRON
  • 5 WATKINS JOHNSON
  • 6 WORLD WIDE

Trans GP BJT NPN 80V 0.5A 3-Pin TO-5

Request For Quote Datasheet
Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 120 V
Maximum Collector Emitter Saturation Voltage 5@15mA@150mA V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 0.5 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 800 mW
Type NPN