2N1937 GP BJT

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  • 100 HARRIS SEMI
  • 223 NEW JERSEY SEMICONDUCTOR
  • 4 SILICON TRANSISTOR CORP
  • 17 SOLID SATE
  • 1 TEXAS INSTRUMENT

Trans GP BJT NPN 80V 20A 3-Pin TO-63

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 0.75@1.6mA@10mA V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 20 A
Maximum Power Dissipation 150000 mW
Type NPN