2N1988 GP BJT
Datasheet: View
Stock
- 11 GENERAL INSTRUMENT
- 10831 NEW JERSEY SEMICONDUCTOR
- 2 RAYTHEON
- 102 SOLID SATE
- 15 TEXAS INSTRUMENT
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Emitter Saturation Voltage | 1@1mA@10mA | V |
| Maximum Collector Emitter Voltage | 100 | V |
| Maximum DC Collector Current | 10 | A |
| Maximum Power Dissipation | 125000 | mW |
| Type | NPN |