2N2060B GP BJT

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  • 494 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 60V 0.5A 6-Pin TO-78

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Features Values Unit
Category Bipolar Small Signal
Configuration Dual
Material Si
Maximum Collector Base Voltage 100 V
Maximum Collector Emitter Saturation Voltage 0.3@5mA@50mA V
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 0.5 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 600 mW
Type NPN