2N2101 GP BJT
Datasheet: View
Stock
- 5 INTERNATIONAL DEVICES INC
- 945 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 120 | V |
| Maximum Collector Emitter Saturation Voltage | 0.3@150mA | V |
| Maximum Collector Emitter Voltage | 65 | V |
| Maximum DC Collector Current | 1 | A |
| Maximum Emitter Base Voltage | 7 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 1000 | mW |
| Maximum Transition Frequency | 60(Min) | MHz |
| Type | NPN |