2N2102 GP BJT

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  • 63073 NEW JERSEY SEMICONDUCTOR
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  • 33 SOLID STATE TRANSISTOR
  • 14 SOLITRON
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  • 4 TRANSITRON

Trans GP BJT NPN 65V 1A 3-Pin TO-39 Box

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 120 V
Maximum Collector Emitter Saturation Voltage 0.5@150mA V
Maximum Collector Emitter Voltage 65 V
Maximum DC Collector Current 1 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 1000 mW
Maximum Transition Frequency 60(Min) MHz
Type NPN