2N2107 GP BJT
Datasheet: View
Stock
- 117 GESEMI
- 269 NEW JERSEY SEMICONDUCTOR
- 6 TRANSITRON
- 10 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Emitter Saturation Voltage | 2@0.04mA@0.2mA | V |
| Maximum Collector Emitter Voltage | 60 | V |
| Maximum DC Collector Current | 0.5 | A |
| Maximum Power Dissipation | 1000 | mW |
| Type | NPN |