2N2137 GP BJT

default part image

Datasheet: View

Stock

  • 2 HUGHES
  • 1273 NEW JERSEY SEMICONDUCTOR
  • 11 WORLD WIDE

Trans GP BJT NPN 100V 2A 4-Pin TO-111

Request For Quote Datasheet
Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 150 V
Maximum Collector Emitter Saturation Voltage 1@0.1A@1A V
Maximum Collector Emitter Voltage 100 V
Maximum DC Collector Current 2 A
Maximum Emitter Base Voltage 8 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 30000 mW
Type NPN