2N2147 GP BJT
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Stock
- 1 ELECTRONIC TRANSISTOR
- 2 LANSDALE
- 8 LTE
- 1101 NEW JERSEY SEMICONDUCTOR
- 1 RAYTHEON
- 1 RCA
- 8 SOLID SATE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 150 | V |
| Maximum Collector Emitter Saturation Voltage | 1@0.1A@1A | V |
| Maximum Collector Emitter Voltage | 100 | V |
| Maximum DC Collector Current | 2 | A |
| Maximum Emitter Base Voltage | 8 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 30000 | mW |
| Type | NPN |